About the Journal

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Guidelines for Contributors

Device Modeling and Simulation

We believe modeling is an art and have shown that an assembly of analogical reasoning, geometrical interpretation, and interpolation techniques yields physically meaningful, analytical and compact models. We have also demonstrated how numerical 2-D / 3-D semiconductor device simulators can be used to assess novel device concepts, gain insights into physical phenomena and develop analytical models. Some of our key contributions have been

• On state characteristics of AlGaN / GaN HEMTs
• Breakdown and gate leakage of AlGaN / GaN HEMTs
• Analytical modeling and simulation of nanoscale junctions and FETs More »

Advisory Board

Editorial Board

Peer Review Commiee

Issues

Call for papers